A Cutting-Edge Nanotechnology Company

Odyssey Semiconductor, Inc. was founded in Ithaca, NY by Dr. Richard J. Brown and Dr. James R. Shealy. The Company believes it has disruptive proprietary technology that would enable gallium nitride (GaN) to displace silicon carbide (SiC) as the dominant high voltage power switching semiconductor material of choice. Gallium Nitride: a Superior Choice for Power Switching Applications

The material properties of gallium nitride (GaN) make it a far superior option over silicon carbide (SiC) for high voltage power switching applications. To date, however, GaN processing technology has not been able to produce a viable GaN high voltage switching transistor operating above 1,000 V. Current devices are largely horizontal conduction devices based on radio frequency (RF) designs modified to operate at high voltage. These designs are not scaleable beyond 1,000 V for operating voltage, which limits their use to low voltage, consumer electronics applications.

Our Unique GaN Processing Technology

Odyssey Semiconductor’s unique GaN processing technology allows for the realization of vertical current conduction GaN devices which extends application voltages from 1,000 V to over 10,000V, allowing GaN power switching devices to extend well beyond the consumer electronics application space and into more demanding applications such as electric vehicles, industrial motor control, and energy grid applications.

New York Headquarters

Located in Ithaca, N.Y., Odyssey Semiconductor’s facility handles all aspects of development for GaN switching devices. Find out how the facility fills the gap between university labs and large-scale wafer foundries.

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Highly Experienced Leaders

Odyssey Semiconductor’s management team and board of directors consists of highly respected professionals in the semiconductor industry and academia. The management team alone has over 90 years of combined experience in the industry.

Management Team

Board of Directors